Microdefects in Czochralski Silicon

Numerical Modeling of Czochralski Silicon Crystal Growth

Modeling of heat transfer is presented for the entire Czochralski Si-growth furnace. The axisymmetric steady-state approach with moving computational grids is used. Melt turbulent flow, inert gas flow, heat transfer in solid parts, and radiative heat transfer in the system are considered. The Reynolds-averaged Navier-Stokes equations written with the Boussinesq approximation and the energy equa...

Intentional thermal donor activation in magnetic Czochralski silicon

We have made a quantitative study about the thermal activation of thermal donors in high resistivity magnetic Czochralski silicon. The thermal donor activation has been performed through a thermal treatment at 430 1C up to a total time of 80min. The space charge density after each annealing step has been extracted from capacitance–voltage measurements. If the starting material is boron-doped p-...

Boron-oxygen defect imaging in p-type Czochralski silicon

Generation of dislocation glide loops in Czochralski silicon

Critical stresses necessary to generate dislocation glide loops in Czochralski silicon containing oxide precipitates have been investigated. Using three-point bending and etching techniques, it was possible to determine the minimum shear stress required to generate dislocation glide loops from controlled distribution of precipitates under constant-stress conditions. The generation of glide disl...

Particle detectors made of high-resistivity Czochralski silicon

We have processed pin-diodes and strip detectors on nand p-type high-resistivity silicon wafers grown by magnetic Czochralski method. The Czochralski silicon (Cz-Si) wafers manufactured by Okmetic Oyj have nominal resistivity of 900O cm and 1.9 kO cm for nand p-type, respectively. The oxygen concentration in these substrates is slightly less than typically in wafers used for integrated circuit ...